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鲁汶仪器专家学术交流通知

发布时间:2016-05-31

       6月1日上午,在交大曲江校区机械制造系统工程国家重点实验室(西五楼)的A420会议室,鲁汶仪器来机械学院进行学术合作交流。

来访人员包括:

-Mikhail Baklanov,鲁汶仪器首席技术官 CTO,半导体业界后道先导工艺全球泰斗式人物.

-胡冬冬,鲁汶仪器等离子体设备技术总监.

-许开东,鲁汶仪器CEO, 中组部千人计划,半导体设备、工艺专家.

交流日程如下:

-9:30 – 10:30,学术报告:集成电路中low-k材料的应用及挑战

-10:30 – 12:30  小范围讨论,介绍鲁汶仪器,参观机械学院实验室,合作讨论等

学术报告内容:

-题目: 集成电路中low-k材料的应用及挑战

-报告人:Mikhail Baklanov 博士

-听众:大学老师,研究生,本科高年级学生

Title of the presentation

Challenges in the implementation of low-k dielectrics in advanced ULSI interconnects.

Name /title of the speaker

Mikhail R. Baklanov / Ph. D

Affiliation

Leuven Instruments

City/ Country

Leuven, Belgium

Email

Mikhail.baklanov@leuven-instruments.com

Abstract of the presentation

With the aggressive scaling of advanced integrated circuits to deep sub-micron levels, the signal delay caused by interconnects became increasingly significant compared to the delay caused by the gate. In addition, the cross talk noise and power dissipation became much more important in circuit performance. To reduce the resistance- capacitance (RC) delay, the industry has replaced the Al conductor by Cu (lowering resistance) and Silicon Dioxide (SiO2) by materials with a lower dielectric constant, low-k (lowering capacitance). In order to reduce the dielectric constant of a material, either atomic groups with a small polarizability can be inserted or the electronic density can be lowered. The density has a stronger effect on the k-value than the polarizability, since the density can be lowered till zero (air-gaps), achieving unity as k-value. The ultra low-k materials introduction in Cu technology has been much slower than anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has increased the level of complexity tremendously. In this presentation, the challenges appearing during the integration of ultra low-k dielectrics will be discussed, since a proper understanding of these issues is essential for downscaling of the interconnect system. The extreme vulnerability of porous low-k to processing - induced damage (accompanied with the loss of dielectric performance and reliability) demands a continuous innovation of materials, processes and integration approaches. Recently developed new materials and innovation solutions for low-k integration will also be discussed.

Speaker’s photo

Brief biography of Speaker

Dr. Mikhail R. Baklanov graduated from Novosibirsk State University (Russia). He obtained his PhD degree in Chemical Sciences in 1976 and the Habilitation degree in 1991. In 1974 - 1995, he worked at the Institute Semiconductor Physics of Russian Academy of Sciences and successively held the positions of Researcher, Senior Researcher and Head of Laboratory. In 1995–2001, he worked at IMEC, Leuven, Belgium as a visiting Professor, and in 2001–2003 as R&D Director in XPEQT, Switzerland/ Belgium.

In 2003–2016 he was working as a Principal Scientist at IMEC, Belgium. Since 03.2016, he is working as a Visiting Professor at NCUT and CTO in Leuven instruments, Leuven, Belgium. He has been serving as a member of Organizing Committees of several international conferences. He has published more than 600 publications, including more than 300 papers in peer reviewed journals and >60 invited presentations at International conferences. He has granted more than 35 patents, and has been Editor and contributor of several books. The citation of his papers is higher than 6500.

 

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